Search results for "Vapour deposition"
showing 10 items of 10 documents
Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition
2020
The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire templates by propane (C3H8) chemical vapor deposition (CVD) at temperature of 1350{\deg}C. After optimization of the C3H8 flow rate, a uniform and conformal Gr coverage was achieved, which proved beneficial to prevent degradation of AlGaN morphology. X-ray photoemission spectroscopy (XPS) revealed Ga loss and partial oxidation of Al in the near-surface AlGaN region. Such chemical modification of a 2 nm thick AlGaN surface region was confirmed by cross-sec…
Vacuum arc deposition of protective layers on glass and polymer substrates
2001
Abstract Vacuum arc deposition allows one to deposit various coatings on insulating and temperature-sensitive substrates (like polymers). An advantage of the vacuum arc deposition technique is the low substrate temperature during the deposition process. A vacuum arc deposition apparatus for the coating of large-area substrates has been developed. Ti, TiN, TiO 2 and diamond-like single and multilayer coatings have been deposited on plastic and glass substrates. The vacuum arc technology permits formation of multilayer colour filters of high uniformity on substrates with dimensions up to 2000×1400 mm 2 . The microstructure, chemical composition and optical properties of the deposited coatings…
Core-shell Zn-doped TiO2-ZnO nanofibers fabricated via a combination of electrospinning and metal-organic chemical vapour deposition
2010
Zn-doped TiO2 nanofibers shelled with ZnO hierarchical nanoarchitectures have been fabricated combining electrospinning of TiO2 (anatase) nanofibers and metal-organic chemical vapor deposition (MOCVD) of ZnO. The proposed hybrid approach has proven suitable for tailoring both the morphology of the ZnO external shell as well as the crystal structure of the Zn-doped TiO2 core. It has been found that the Zn dopant is incorporated in calcined electrospun nanofibers without any evidence of ZnO aggregates. Effects of different Zn doping levels of Zn-doped TiO2 fibers have been scrutinized and morphological, structural, physico-chemical and optical properties evaluated before and after the hierarc…
Effects of Metal-Organic Chemical Vapour Deposition grown seed layer on the fabrication of well aligned ZnO nanorods by Chemical Bath Deposition
2011
Well aligned, long and uniform ZnO nanorods have been reproducibly fabricated adopting a two-steps Metal-Organic Chemical Vapour Deposition (MOCVD) and Chemical Bath Deposition (CBD) fabrication approaches. Thin (<100 nm) ZnO buffer layers have been seeded on silicon substrates by MOCVD and ZnO layers have been subsequently grown, in form of well textured nanorods, using CBD. It has been found that the structure and thickness of the seed layer strongly influence the final morphology and the crystal texturing of ZnO nanorods as well as the CBD growth rate. There is, in addition, a strong correlation between morphologies of CBD grown ZnO nanorods and those of the seed layer underneath. Thus, …
Sub-nanosecond excitonic luminescence in ZnO:In nanocrystals
2019
The financial support of research European Union ERA.NET RUS_ST20170-51 . This work was partly supported by Russian Foundation for Basic Research, Russia , project No. 18-52-76002 . The sample preparation was carried out as part of SFERA II project -Transnational Access activities ( European Union 7th Framework Programme Grant Agreement N3126430 ).
Deposition of tin sulfide thin films from tin(iv) thiolate precursors
2001
AACVD (aerosol-assisted chemical vapour deposition) using (PhS)(4)Sn as precursor leads to the deposition of Sn3O4 in the absence of H2S and tin sulfides when H2S is used as co-reactant. At 450 degreesC the film deposited consists of mainly SnS2 while at 500 degreesC SnS is the dominant component. The mechanism of decomposition of (PhS)(4)Sn is discussed and the structure of the precursor presented.
Chemical Vapour Deposition of Pure Titanium Using a Heated Wire Reactor and TiI4
2017
Master's thesis Renewable Energy ENE500 - University of Agder 2017 An experimental reactor system has been optimized throughout a series of experiments for making titanium tubes from an electrically heated titanium coil filament by a chemical vapour deposition method, based on the original van Arkel-de Boer -process. The titanium is thermally decomposed on the filament from vapourized titanium tetraiodide in a method not seen in similar experiments. The small-scale reactor is built for this purpose, and the associated systems and methods are developed to maintain the optimal conditions for a continuous metal deposition. A filament current control system is made of an Arduino micro-controlle…
Optical active centres in ZnO samples
2006
Abstract In recent years, there has been a resurgence in the interest in the use of ZnO (Eg ∼ 3.37 eV) as a material for a wide range of opto-emitter applications spanning visible and short wavelengths. Bulk, thin films and nanomaterials obtained using different synthesis methods have been investigated for optoelectronic and biotechnological device applications. Nominally undoped bulk samples typically present a myriad-structured near-band-edge recombination, mainly due to free/bound excitons and donor–acceptor pair transitions. Furthermore, deep level emission due to intrinsic defects and extrinsic impurities, such as transition metal ions, are commonly observed in different grades of bulk…
Structural distortions in homoleptic (RE)4A (E = O, S, Se; A = C, Si, Ge, Sn): Implications for the CVD of tin sulfides
2001
The structures of Sn(SBut)4 and Sn(SCy)4 have been determined and adopt S4 and D2 conformations respectively; the anion [(PhS)Sn3]−, as its Ph4P+ salt, has a structure approaching Cs symmetry. In all three compounds, there are large variations in the ∠S–Sn–S within the same molecule, which have been rationalised in terms of the C–S–Sn–S–C conformations. For Sn(SR)4, the ∠S–Sn–S increases as the conformations change from trans, trans to trans, gauche and gauche, gauche, as the number of eclipsed lone pairs decreases and this rationale is shown to be applicable to a variety of A(ER)4 (A = C, Si, Ge, Sn; E = O, S, Se) and related [Mo(SR)4, Ga(SR)4−] systems. AM1 calculations have been used to …
Raw data for the publication "Effect of graphene substrate type on formation of Bi2Se3 nanoplates", Sci. Rep. 9, 4791, 2019. https://doi.org/10.1038/…
2020
This dataset contains the raw AFM and SEM measurement data used for the study of stages of formation of Bi2Se3 nanoplates on different substrates and for the statistical analysis of sizes and thicknesses of the nanoplates. The results are published in Sci. Rep. 9, 4791, 2019. https://doi.org/10.1038/s41598-019-41178-1